RJP63K2DPP-M0 Datenblatt PDF

Teilenummer : RJP63K2DPP-M0

Function : Silicon N Channel IGBT High Speed Power Switching

Hersteller : Renesas Electronics

Pinout :

RJP63K2DPP-M0 datenblatt

Beschreibung :

*  Trench gate and thin wafer technology (G6H-II series)
*  Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ
*  High speed switching: tr= 60 ns typ, tf= 200 ns typ.
*  Low leak current: ICES= 1 A max
*  Isolated package TO-220FL

Datenblatt PDF Download

RJP63K2DPP-M0 pdf

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