RJP30H1DPD Datenblatt PDF ( Pinout, schematic )

Teilenummer : RJP30H1DPD

Function : N-Channel Power MOSFET / TO-263

Hersteller : Renesas Electronics

Pinout :

RJP30H1DPD datenblatt

Beschreibung :

* Trench gate and thin wafer technology (G6H-II series)

* High speed switching: tr = 80 ns typ., tf = 150 ns typ.

* Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

* Low leak current: ICES= 1 A max.

 

Datenblatt PDF Download

RJP30H1DPD pdf

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RJP30H1DPD

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