Teilenummer : RJP30H1DPD
Function : N-Channel Power MOSFET / TO-263
Hersteller : Renesas Electronics
Pinout :
Beschreibung :
* Trench gate and thin wafer technology (G6H-II series)
* High speed switching: tr = 80 ns typ., tf = 150 ns typ.
* Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
* Low leak current: ICES= 1 A max.
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RJP30H1DPD