RJH30H2DPK-M0 Datenblatt PDF

Teilenummer : RJH30H2DPK-M0

Function : High Speed Power Switching

Hersteller : Renesas Electronics

Pinout :

RJH30H2DPK-M0 datenblatt

Beschreibung :

* Trench gate and thin wafer technology (G6H-II series)

* Low collector to emitter saturation voltage: VCE(sat)= 1.4 V typ

* High speed switching: tr = 100 ns typ, tf = 180 ns typ

* Low leak current: ICES= 1 uA max

*  Built-in Fast Recovery Diode: VF= 1.4 V typ , trr = 23 ns typ

Datenblatt PDF Download

RJH30H2DPK-M0 pdf

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RJH30H2DPK-M0

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