K2996 Datenblatt PDF

Teilenummer : K2996

Function : TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Hersteller : Toshiba

Pinout :

K2996 datenblatt

Beschreibung :

DC−DC Converter, Relay Drive and Motor Drive Applications

* Low drain−source ON resistance  : RDS(ON) = 0.74 Ω(typ.)

* High forward transfer admittance  : |Yfs| = 6.8 S (typ.)

* Low leakage current  : IDSS= 100 μA (max) (VDS= 600 V)

* Enhancement mode  : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Datenblatt PDF Download

K2996 pdf

Andere Datenblätter in der Datei :
2SK2996,K2996

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