IRFB9N60A Datenblatt PDF

Teilenummer : IRFB9N60A

Function : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A

Hersteller : International Rectifier

Pinout :

IRFB9N60A datenblatt

Beschreibung :

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Datenblatt PDF Download

IRFB9N60A pdf

Andere Datenblätter in der Datei :
FB-9N60A,FB9N60A,IRFB9N60A

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