IRF630B Datenblatt PDF

Teilenummer : IRF630B

Function : 200V N-Channel MOSFET

Hersteller : Fairchild Semiconductor

Pinout :

IRF630B datenblatt

Beschreibung :

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

• 9.0A, 200V, RDS(on)= 0.4Ω@VGS= 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Datenblatt PDF Download

IRF630B pdf

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