Harris IRF320 Datenblatt PDF – N-Channel Power MOSFETs

Teilenummer : IRF320

Funktion :2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Hersteller : Harris Semiconductor

Pinout :
IRF320 datenblatt

Beschreibung :

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Datenblatt PDF Download

IRF320 pdf

Andere Datenblätter in der Datei : IRF320, IRF321, IRF322, IRF323