D1047 Datenblatt – Vcbo = 200V, 12A, NPN Transistor – ST

Teilenummer : D1047

Function : High power NPN epitaxial planar bipolar transistor

Package : TO-3P Type

Hersteller : STMicroelectronics

Pinout :

D1047 datenblatt

Beschreibung :

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

 

1. High breakdown voltage VCEO = 140 V

2. Typical ft= 20 MHz

3. Fully characterized at 125`C

 

Absolute maximum ratings :

  1. VCBO Collector-base voltage (IE= 0)  : 200 V
  2. VCEO Collector-emitter voltage (IB= 0)  : 140 V
  3. VEBO Emitter-base voltage (IC= 0)  : 6 V
  4. IC Collector current  : 12 A

D1047 Datenblatt PDF Download

D1047 pdf

Andere Datenblätter in der Datei : 2SD1047