Teilenummer : BSS123
Function : N-CHANNEL ENHANCEMENT MODE MOSFET
Hersteller : Diodes Incorporated.
These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology.
These productshave been designed to minimizon-state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltagelow current applications such as:
Features and Benefits
– Low Gate Threshold Voltage
– Low Input Capacitance
– Fast Switching Speed
– Low Input/Output Leakage
– High Drain-Source Voltage Rating
– Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
– Halogen and Antimony Free. “Green” Device (Note 3)
– Qualified to AEC-Q101 Standards for High Reliability
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